Power Electronics / Power Management


2000 V power MOSFETs

20 May 2015 Power Electronics / Power Management

IXYS announced an expansion of its high-voltage power MOSFET product portfolio with the addition of new 2000 V N-channel devices. With a current rating of 1 A, they are specifically designed for high-voltage, high-speed power conversion applications.

Due to the positive temperature coefficient of their on-state resistance, these MOSFETs can be operated in parallel, thereby eliminating the need for lower-voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability and PCB space saving.

The new parts are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and X-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid.

The MOSFETs are available in TO-247, TO-247HV and TO-263HV packages, the latter two with increased creepage distances between leads, making them able to withstand higher voltages. The part numbers include IXTH1N200P3, IXTH1N200P3HV and IXTA1N200P3HV.

For more information contact Stuart Hanford, Arrow Altech Distribution, +27 (0)11 923 9600, shanford@arrow.altech.co.za, www.arrow.altech.co.za



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