Serial Quad I/O memory IC
11 October 2017
DSP, Micros & Memory
Microchip announced availability of a new 1,8 V Serial Quad I/O SuperFlash memory device. The SST26WF064C, a low-voltage 64 Mb device, combines Dual Transfer Rate (DTR) with proprietary SuperFlash NOR Flash technology, making it ideal for wireless and battery-powered applications.
DTR gives customers the ability to output data on both edges of the clock which reduces overall data access time and power consumption. SuperFlash technology also reduces power consumption by providing the industry’s fastest erase times. Typical chip-erase time for the SST26WF064C is between 35 and 50 milliseconds, compared to competitive Flash devices which take more than 30 seconds to erase. The SST26WF064C also integrates a hardware-controlled reset functionality enabling a robust device reset.
Operating at frequencies reaching 104 MHz, the device enables minimum latency eXecute-In-Place (XIP) capability without the need for code shadowing on SRAM. The new device uses a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial Flash devices. The SST26WF064C also supports full command-set compatibility with traditional SPI protocol.
Microchip’s high-performance SuperFlash technology also means the device is based on a proprietary split-gate Flash memory cell giving additional capabilities such as high endurance cycling of up to 100 000 erase/write cycles and data retention of over 100 years. The SST26WF064C is offered in a variety of package options including an 8-contact WDFN (6 x 5 mm), 8-lead SOIJ (5,28 mm), 16-lead SOIC (7,50 mm) and 24-ball TBGA (8 x 6 mm).
For more information contact Shane Padayachee, Avnet South Africa, +27 (0)11 319 8600, shane.padayachee@avnet.com, www.avnet.co.za
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