Telecoms, Datacoms, Wireless, IoT


Broadband GaAs pHEMT amplifiers

26 November 2008 Telecoms, Datacoms, Wireless, IoT

RF Micro Devices has added four new broadband GaAs pHEMT amplifier ICs to its SUF family of products targeting multiple applications within the aerospace and defence market. Given their broadband frequency performance, they are also applicable to telecom infrastructure and optical networks. The SUF-7000, -8000, -8500 and -9000 die-level amplifiers operate from DC to 20 GHz and deliver multiple combinations of P1dB, gain and linearity performance. Noise figures at 10 GHz range from 2,7 dB to 4,3 dB, while P1dB is either 13 dBm or 15 dBm, depending on the particular devices. All chips operate at 5 V and consume between 25 mA and 58 mA for their operation.



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