Renesas Electronics announced the availability of eight new low-loss P- and N-channel power MOSFETs optimised for use in portable electronics.
Featuring low on-resistance, the new devices include the 20 V (VDSS) μPA2600 and the 30 V μPA2601, housed in 2 x 2 mm packages.
The new parts meet the performance demands of portable devices while reducing mounting areas in a wide variety of applications, including load switches (which turn power applied to ICs on or off) and charge/discharge control in portable devices and on/off control and over-current cutoff switches in RF power amplifiers.
The μPA2600 has an on-resistance of 9,3 mΩ (typical value at VGSS = 4,5 V) while the μPA2601 has on-resistance of 10,5 mΩ (typical value at VGSS = 10 V).
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