Power Electronics / Power Management


MOSFETs with integrated fast body diodes

6 February 2013 Power Electronics / Power Management

Renesas Electronics announced the availability of three new 600 V super-junction MOSFETs featuring figure of merit (on-state resistance times gate charge) suitable for high-speed motor drives, DC-DC converters and DC-AC inverter applications.

With on-state resistance as low as 150 mΩ, the new RJL60S5DPP, RJL60S5DPK and RJL60S5DPE devices will contribute to improved power efficiency in home appliance motor drives, such as for air conditioners, that employ high-speed motors with inverterised control.

The MOSFETs have built-in fast body diodes with specifications optimised for high-speed motor control applications. There is a significant reduction in the diodes’ reverse recovery time to only 150 ns, about one third that of the diodes in similarly rated existing Super Junction MOSFET devices.

For more information contact Marinus Rudman, Hi-Q Electronics, +27 (0)21 595 1307, [email protected], www.hi-q.co.za



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