International Rectifier has introduced a family of rugged 1200 V ultra-fast insulated-gate bipolar transistors (IGBTs) optimised for industrial motor drive and UPS systems.
The new devices leverage IR’s field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode and featuring a 10 μs minimum short circuit time rating, the devices are ideal for rugged industrial applications. They feature very low switching losses while offering high system efficiency and rugged transient performance.
The packaged devices cover a broad current range from 10 to 50 A. Other key performance characteristics include Tjmax of 150°C, positive VCE(on) temperature coefficient for easy paralleling and low VCE(on) to reduce power dissipation and achieve higher power density. Die products are also available.
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