Power Electronics / Power Management


N-channel power MOSFETs

24 July 2013 Power Electronics / Power Management

Vishay has added new 650 V power MOSFETs to its E Series of devices. These 22 new devices in eight different packages offer an extended on-resistance range from 30 m to 600 m at 10 V and broaden the series’ maximum current ratings from 6 A to 105 A.

Based on the next generation of Vishay Siliconix Super Junction Technology, the 650 V E Series MOSFETs allow the company to offer extended headroom for applications that require additional input-voltage safety margin in its renewable, industrial, lighting, telecommunications, consumer and computing markets.

All E Series devices offer ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including power factor correction, server and telecom power systems, welding, uninterruptible power supplies (UPS), battery chargers, LED lighting, semiconductor capital equipment, adaptors and solar inverters.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. The MOSFETs are RoHS-compliant.

For more information contact EBV Electrolink, +27 (0)21 402 1940, capetown@ebv.com, www.ebv.com



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