Opto-Electronics


IR-enhanced silicon avalanche photodiodes

24 July 2013 Opto-Electronics

Hamamatsu Photonics introduced a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity. Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element.

This process drastically increases the sensitivity in wavelengths longer than 800 nm.

The S11519 series are silicon avalanche photodiodes (APDs) utilising this new technology, offering ultra-high sensitivities at 1000 nm of between 70-75 A/W at a gain of 100. Compared to conventional APDs designed for YAG laser detection, the new devices offer an additional 15-20 A/W photosensitivity under the same operating conditions. At 1,06 μm, the quantum efficiency of these new APDs reaches 40%, compared to 20% for a conventional APD.

The detectors are available in 1 mm diameter and 3 mm diameter active area types, which offer bandwidths of 400 MHz and 230 MHz respectively. They are specially designed for low bias operation, with improved breakdown voltage, dark current and cut-off frequency characteristics compared to a conventional APD.

The increased sensitivity in the near-infrared region makes the S11519 series suitable for applications including YAG laser monitors, high-speed IR measurements and many more.



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