Power MOSFETs built on new technology

Power Electronics / Power Management

18 September 2013 Power Electronics / Power Management

STMicroelectronics has introduced its latest generation of energy-efficient power devices that reduce the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation and automotive applications.

ST’s new STripFETVII DeepGATE MOSFETs deliver elevated conducting efficiency for 80 and 100 V devices, while switching efficiency is also increased. In addition, the devices help to simplify designs and reduce equipment size and cost by allowing system power and efficiency targets to be met using fewer devices in small package sizes.

The critical advance in ST’s STripFET VII DeepGATE technology is an enhanced MOSFET gate structure, which lowers device on-state resistance while also reducing internal capacitances and gate charge for faster, more efficient switching. The devices also have high avalanche ruggedness to survive potentially damaging hard conditions, which makes them a strong choice for automotive applications.

More than 15 STripFET VII DeepGATE devices are available immediately for sample or production orders, including the STP270N8F7 80 V device and several 100 V parts in a choice of TO-220, DPAK, PowerFLAT 5x6, and 2-lead or 6-lead H2PAK packages.

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Power MOSFETs built on new technology

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