M/A-COM Technology Solutions announced a new GaN on SiC HEMT power transistor for L-Band pulsed radar applications. The MAGX-000912-500L00 is a gold-metalised matched transistor optimised for pulsed avionics and radar applications. It provides 500 W of output power with 19,8 dB of gain and 60% efficiency.
The device also boasts very high breakdown voltages, which allows for reliable and stable operation at more extreme load mismatch conditions. It is ideally suited for broadband avionics applications in the 960–1215 MHz range, such as traffic collision avoidance systems (TCAS), distance measuring equipment (DME) and data links.
The transistor is assembled using state-of-the-art design and packaging assembly, and is offered in both flanged and flangeless ceramic packages.
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