Design engineers are well aware that providing ESD (electrostatic discharge) protection according to the IEC’s 61000-4-2 standard can fall short when guarding against the more severe damage caused by charged board events (CBEs).
These extremely strong surge events are distinguished by a high peak current and fast rise time and can damage the I/O ports of smartphones, tablets, automotive infotainment devices and other sensitive electronics.
Recognising this, TE Connectivity’s circuit protection business unit has introduced a new family of silicon ESD (SESD) devices. Exhibiting ±20 kV and ±22 kV air discharge ratings – which go well beyond the IEC’s 8 kV contact and 15 kV air discharge standards – these devices help designers solve the pervasive protection challenge caused by CBEs.
The new products come in both uni- and bi-directional configurations and are 1, 2, and 4-channel devices. They are available in tiny 0201 and 0402 sizes and standard flow-through packages. In addition to offering 20 kV contact discharge, the devices’ surge capability (2,2 A for 4-channel array and 2,5 A for 1-and 2-channel devices) help provide more robust performance.
The SESD devices’ input capacitance of 0,15 pF (bi-directional) and 0,30 pF (uni-directional) at the high-frequency spectrum helps meet USB, HDMI, eSATA and other high-speed signal requirements. Their low clamping voltage (<15 V) helps facilitate fast turn-on time and minimise energy let-through to sensitive downstream chipsets. Moreover, their very low leakage current (50 nA) helps reduce power consumption in applications where energy saving is imperative.
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