To meet the latest stringent efficiency regulations, power supply designers must consider the use of new power converter topologies and more efficient electronic components such as high-voltage silicon carbide (SiC) Schottky rectifiers.
In hard-switching applications such as high-end server and telecom power supplies, SiC Schottky diodes show a significant power-loss reduction and are commonly used. They are also increasingly being used in solar inverters, motor drives, uninterruptible power supplies (UPS) and electrical vehicles (EV).
STMicroelectronics now provides a full family of SiC diodes, ranging from 600 V to 1200 V, including single and dual diodes. They take advantage of silicon carbide’s superior physical characteristics over silicon, with four times better dynamic characteristics and 15% lower forward voltage. These products are available in a variety of packages from DPAK to TO-247, including insulated TO-220AB/AC.
Seven of these diodes are now available in the TO-220AB Ins and TO-220AC Ins insulated packages with internal insulation between the silicon and the metal tab of the package. These packages provide a thermal resistance junction to heatsink (Rth(j-hs)) equivalent to or better than using external insulating foils while eliminating the fiddly, time consuming and error prone process of mounting the external insulation foil with heatsink compound between the package and the heatsink.
Four 650 V single diodes from 4 A to 10 A (STPSCxxH065DI) are available in the TO-220AC Ins package and three 650 V dual in-series diodes from 6 A to 10 A (STPSCxxTH13TI) are available in the TO-220AB Ins package.
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