Power MOSFETS handle hard commutation
19 November 2014
Power Electronics / Power Management
The new OptiMOS Fast Diode (FD), Infineon's latest generation of power MOSFETs in 200 V and 250 V, is optimised for body diode hard commutation.
Improved hard commutation ruggedness makes this device ideal for demanding conditions requiring higher dv/dt, dl/dt and current densities. The new family simplifies the design of hard-switching applications such as telecom systems, industrial power supplies, Class D audio amplifiers, motor controls and DC/AC inverters. It supports the highest standards of performance with an optimised reverse recovery charge (Qg).
With 40% lower Qrr than OptiMOS 3, OptiMOS FD 200 V and 250 V improve system reliability significantly by reducing voltage overshoot. This minimises the need for a snubber circuit, resulting in less engineering cost and effort.
For more information contact Davis Moodley, Infineon Technologies, +27 (0)11 706 6099, [email protected], www.infineon.com
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