Power Electronics / Power Management


High-temperature MOSFETs

21 March 2018 Power Electronics / Power Management

Taiwan Semiconductor has introduced new 40 V and 60 V N-channel MOSFET families with a rated junction temperature of 175°C.

The parts feature logic or standard gate threshold voltage levels, and a wide range of RDS(on) levels for flexible and robust power switching designs.

Qgd/Qgs and Qrr parameters have been optimised to improve figure of merit and reduce electromagnetic interference (EMI). The MOSFETS are packaged in a small form factor PDFN56 package for improved power density. They exhibit high surge current capability during cold load startup and in-rush.

For more information contact Callie Lombard, Hi-Q Electronics, +27 (0)11 894 8083, callie@hi-q.co.za, www.hi-q.co.za



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