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IGBT/MOSFET driver with integrated bootstrap diodes
14 November 2018, Power Electronics / Power Management

Infineon Technologies has introduced a new half-bridge, 650 V rated EiceDRIVER based on the company’s unique SOI technology. The 2ED2304S06F provides leading negative VS transient immunity, monolithic integration of a real diode for bootstrap, and superior latch-up immunity

Combined with higher frequency switching, these unique features enable more robust, reliable, smaller systems and reduce BOM cost. The half-bridge gate driver is ideally suited for major and small home appliance, low-power drives, and other general inverterised motor drive applications below 1 kW.

The EiceDRIVER 2ED supports typical source and sink currents of 360 mA and 700 mA, respectively, with 310 ns and 300 ns propagation delays. It is a perfect match for IGBT and MOSFET switches rated up to 650 V. The integrated bootstrap diode offers ultra-fast reverse recovery with a typical 36 Ω on-resistance.

Negative transient voltage (VS) immunity of -100 V with repeating pulses provides superior robustness and reliable motor operation. Additional safety features include integrated dead time with cross-conduction prevention logic and independent under-voltage lockout (UVLO) for high- and low-side voltage supplies.

For more information contact Dirk Venter, Altron Arrow, +27 11 923 9600, dventer@arrow.altech.co.za, www.arrow.altech.co.za


Credit(s)
Supplied By: Altron Arrow
Tel: +27 11 923 9600
Fax: +27 11 923 9884
Email: info@arrow.altech.co.za
www: www.altronarrow.com
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