IGBT/MOSFET driver with integrated bootstrap diodes
14 November 2018
Power Electronics / Power Management
Infineon Technologies has introduced a new half-bridge, 650 V rated EiceDRIVER based on the company’s unique SOI technology. The 2ED2304S06F provides leading negative VS transient immunity, monolithic integration of a real diode for bootstrap, and superior latch-up immunity
Combined with higher frequency switching, these unique features enable more robust, reliable, smaller systems and reduce BOM cost. The half-bridge gate driver is ideally suited for major and small home appliance, low-power drives, and other general inverterised motor drive applications below 1 kW.
The EiceDRIVER 2ED supports typical source and sink currents of 360 mA and 700 mA, respectively, with 310 ns and 300 ns propagation delays. It is a perfect match for IGBT and MOSFET switches rated up to 650 V. The integrated bootstrap diode offers ultra-fast reverse recovery with a typical 36 Ω on-resistance.
Negative transient voltage (VS) immunity of -100 V with repeating pulses provides superior robustness and reliable motor operation. Additional safety features include integrated dead time with cross-conduction prevention logic and independent under-voltage lockout (UVLO) for high- and low-side voltage supplies.
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