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Electronics Buyers' Guide

Electronics Manufacturing & Production Handbook 2019


 

600 V GaN HEMTs
30 January 2019, Power Electronics / Power Management

Gallium nitride (GaN) offers fundamental advantages over silicon. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices, with outstanding specific on-resistance and smaller capacitances compared to silicon switches, which makes GaN HEMTs (high electron mobility transistors) ideal for high-speed switching.

The enhancement mode concept offers fast turn-on and turn-off speed as well as a better path towards integration, either on a chip or package level. Infineon Technologies’ CoolGaN 600 V e-mode GaN HEMTs exploit this technology according to a specific, GaN-tailored qualification process that makes it one of the most rugged and reliable solutions in the market.

The transistors enable simpler half-bridge topologies, and are applicable to applications such as server switch-mode power supplies (SMPS), telecoms, adaptors and chargers, wireless charging and Class D audio.

For more information contact Dirk Venter, Altron Arrow, +27 11 923 9600, dventer@arrow.altech.co.za, www.arrow.altech.co.za


Credit(s)
Supplied By: Altron Arrow
Tel: +27 11 923 9600
Fax: +27 11 923 9884
Email: info@arrow.altech.co.za
www: www.altronarrow.com
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