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Three-phase transistor gate driver
31 July 2019, Power Electronics / Power Management

The STMicroelectronics STDRIVE601 three-phase gate driver for 600 V N-channel power MOSFETs and IGBTs provides enhanced ruggedness against negative voltage spikes down to -100 V and responds to logic inputs in just 85 ns.

Featuring smart-shutdown circuitry for fast-acting protection, the chip turns off the gate-driver outputs immediately after detecting overload or short-circuit, for a period determined using an external capacitor and resistor. Designers can set the required duration, using large C-R values if needed, without affecting the shutdown reaction time. An active-low fault indicator pin is provided.

All outputs can sink 350 mA and source 200 mA, with gate-driving voltage range of 9 V – 20 V, for driving N-channel power MOSFETs or IGBTs. Matched delays between the low-side and high-side sections eliminate cycle distortion and allow high-frequency operation, while interlocking and dead-time insertion are featured to prevent cross-conduction.

For more information contact EBV Electrolink, +27 21 402 1940, capetown@ebv.com


Credit(s)
Supplied By: EBV Electrolink
Tel: +27 21 402 1940
Fax: +27 21 419 6256
Email: saro.murabito@ebv.com
www: www.ebv.com
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