Scientists build the world's smallest non-volatile flash memory cell

9 March 2005 News

In a research breakthrough that has broken records in the semiconductor industry, scientists at Infineon Technologies have built the world's smallest non-volatile flash memory cell. The new memory cell measures a mere 20 nanometers. Given that all manufacturing-related challenges - including that of the lithography - can be resolved, Infineon believes the new development would make non-volatile memory chips with a capacity of 32 Gbit possible within a few years - eight times the capacity of that currently available on the market.

Advanced memories today need approximately 1000 electrons in order to reliably remember one bit. The new Infineon memory cell uses just 100 electrons while an additional 100 electrons stores a second bit in the same transistor.

Details about the new flash memory were presented at the IEEE's International Electron Devices Meeting in San Francisco.

www.infineon.com

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