MOSFETs have 'fast body diode characteristics'

23 April 2003 Power Electronics / Power Management

International Rectifier's new 600 V HEXFET power MOSFET family with fast body diode characteristics is tailored for soft switching applications such as the zero voltage switching (ZVS) circuits. ZVS is a technique used to maximise efficiency and enable higher power output in switch mode power supply (SMPS) circuits in today's high speed, broad bandwidth telecommunications and data communications systems where efficiency and reliability is of the greatest importance, says IR.

The fast body diode characteristic in the L Series HEXFET MOSFETs eliminates the need for additional Schottky and HV diodes in ZVS circuits. This reduces component count and the space required. The devices enhance system reliability since the internal body diode is active and carries current for a portion of the duty cycle, unlike bridge or power factor correction circuits where the devices are usually hard-switched. The turn on losses are virtually eliminated in ZVS power supply designs by turning-on the MOSFETs when its integral body diode is conducting. The maximum reverse recovery time for the L series devices is less than 250 ns, and even shorter for lower-current devices.

For more information contact Avnet Kopp, 011 809 6100, [email protected], www.avnet.co.za

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