New world record for high frequency circuits
30 July 2003
News
Infineon Technologies demonstrated new peak performance values in high frequency IC technology at its Munich research laboratories. Infineon designed several key functional building blocks for high-speed communications based on its SiGe:C bipolar technology that reaches a cut-off frequency of more than 200 GHz and demonstrates record ring oscillator gate delay times of 3,7 ps. Tests of the high performance circuits indicated well-balanced transistor parameters for analog and digital applications and very low noise figures. The researchers fabricated and demonstrated three record setting ICs: a >110 GHz dynamic frequency divider, a 86 GHz static frequency divider, and a 95 GHz VCO. The company also demonstrated that an integrated 77G Hz SiGe automotive radar transceiver, based on these building blocks, is now feasible. The results show SiGe bipolar technology is well suited for a wide range of high speed applications like Gbps datacoms and broadband wireless applications or for microwave products.
www.infineon.com
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