L. Montanaro, MOSFET and IGBTs technical marketing, STMicroElectronics
ST MicroElectronic's MDmesh technology, although already the most advanced in high voltage power MOSFET devices, has barely scratched the surface in terms of its potential, The first generation is already in production with a wide and complete product range. Over the last three years ST has developed 26 different product lines with 65 part numbers.
In order to cover the market of zero voltage switching phase shift applications, the FDmesh version was also developed and brought into production.
Now, ST designers have progressed even further and introduced a new improved generation of the MDmesh, bringing new features to the former generation. The first prototypes of four new devices are now available, they are in the 500 and 600 V range and the product range will be enlarged soon.
Comparison between former and improved MDmesh generations
Technical features
The most important changes are highlighted as lower epi-doping and optimisation of topology. This gives the big advantage of a reduction in on-resistance by a factor of 15% compared to the previous generation (see Figures). MDmesh is particularly relevant for PFC and standard hard-switching topologies in applications like telecom, welding machines and high-end servers.
The best figure of merit ever seen in the market yields overall performances that are significantly better than those of the closest competitor's products.
The series includes a new 500 V/160 Ω device in TO-220 and a 500 V/65 mΩ device in TO-247 setting the new record. These give an RDS (on) x Qg typ (Ω x nC) of 6,4 and 5,7 respectively.
For more information contact, Electrocomp, (Value Added Distributor), 011 458 9000.
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