'Smart' power MOSFETs have unique mix of protection circuitry
11 February 2004
Power Electronics / Power Management
A family of self-protected MOSFETS that deliver superior performance in demanding automotive and industrial applications feature an advanced level of integration made possible using On Semiconductor's industry-leading HDPlus wafer process.
The company's SmartDiscrete devices are low-side, self-clamped, 46 V, 48-185 mΩ MOSFETS with integrated current limit protection, over-temperature shut-down, over-voltage protection, and electrostatic discharge (ESD) protection. The monolithic design of the chip optimises performance across a wide temperature range. A selection of integration features are offered, ranging from the industry's first actively clamped, ESD-protected replacement for the commonly used 3055 MOSFET to a fully self-protected MOSFETs with current and temperature limit capabilities.
Protection features are mandatory for applications where a power MOSFET must survive high power and/or short circuit conditions. To address this need, these devices' self-protected circuit design incorporates drain current sensing and limiting. In the event of a short-circuited load, the current limit circuit protects against current spikes. If this condition persists, the temperature circuit monitors the junction temperature and will shut off the device when a specified set point is reached - typically 175°C. The temperature limit circuit will then automatically turn on the main MOSFET after the junction temperature decreases by approximately 15°C. The device thermally cycles until the short condition is corrected.
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