Logic-level automotive trench MOSFETs

19 May 2004 Power Electronics / Power Management Electronics Technology

International Rectifier (IR) has introduced five new logic-level trench HEXFET power MOSFETs. The devices are based on a fabrication process that combines minimum device on-resistance with lower temperature coefficient and the avalanche capability required by the harsh automotive environment. As a result, says the manufacturer, in many applications they can enable a shift from larger-packaged devices such as D2Pak to smaller D-Pak devices, reducing power dissipation and system size.

These devices have all the features of IR's standard gate trench devices and can meet gate drive requirements down to 4,5 V. The family's gate drive capabilities allow the devices to simplify power management integration into microprocessor-controlled circuits in next-generation body electronics such as door modules, window lifts and lighting. Under-the-hood applications include electrical power steering (EPS), brush and brushless DC motor control and anti-lock brake systems (ABS).

IR has improved on efficiency, switching performance, ruggedness and lower gate charge for high-power automotive applications with these MOSFETs. All devices are Q101-qualified and rated for both single-pulse and repetitive avalanche up to the maximum junction temperature of 175°C.

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