New MOSFETs can boost DC-DC converter efficiency

2 June 2004 Power Electronics / Power Management

STMicroelectronics' STripFET III devices, with superior ON-resistance gate charge figure of merit results, are highly suited for DC-DC converters including buck topologies, and their derivatives, that are widely-used in computer and telecom applications.

Gate charge for the high-side controlFET is significantly reduced, says the manufacturer, as is ON-resistance for the low-side synchronousFET. Reverse recovery characteristics of the synchronous FET parasitic body diode have been optimised, while the very low intrinsic gate resistance of STripFET III devices plays a key role in reducing switching losses at higher frequencies.

New bondless packages called ClipPAK, and bondless SO-8, further improve thermal performance and reduce conduction losses. This gives STripFET III devices even better figure of merit results.

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