Power Electronics / Power Management


Ultra low resistance PowerMOSFET

28 July 2004 Power Electronics / Power Management

NEC Electronics (Europe) has introduced a new series of PowerMOSFET in advanced UMOS-4 technology, extending its NP-series with 15 new products. These MOSFETs feature ultra-low resistance, high current performance and temperature stability up to 175°C. The main product features are ultra-low RDS(ON), down to 1,7 mΩ max (@ 30 V, TO-263ZP), benchmark setting high-current performance up to 110 A and temperature stability up to 175°C. The products cover the low voltage range (30, 40 and 55 V). In addition to standard TO-252 and TO-263 packages, the NP-series now includes devices in NEC's newly-developed advanced TO-263/TO-263ZP package, where the number of source bond wires has been increased from 2 to 4. Still retaining the standard TO-263 footprint, this new approach allows higher current ratings and lower resistances.

Arrow Altech Distribution, 011 923 9600,

Memec SA, 011 897 8600



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