Power Electronics / Power Management


New MOSFET is versatile switching device

6 October 2004 Power Electronics / Power Management

ON Semiconductor's NUD3048 is a highly integrated N-Channel MOSFET featuring a breakdown voltage of 100 V and a buffered gate voltage rating of 100 V. For use in telecom, datacom or any -48 V bus distribution power system applications, this versatile device is the first integrated MOSFET in the industry capable of functioning as a level shifter, a power good signal and an inrush limiter, claims the company. Additionally, it can be used as a relay drive circuit.

ON Semiconductor has taken an industry standard 2N7002x small signal 60 V MOSFET and supercharged it into a 100 V breakdown voltage N-Channel MOSFET - creating a highly versatile switching device ideal for a wider range of communications applications. A gate-to-source zener clamp, ESD protection diodes and 100 KΩ gate resistor have been integrated into the device - eliminating the need for many of the discrete components commonly required to support a 2N7002x MOSFET.

The NUD3048 is offered in a TSOP6 package for several reasons. First, its small size conserves board space and allows maximum board density. Secondly, the package enables external connections to both sides of the 100 K integrated gate resistor - enabling a designer to add a gate capacitor to delay turn-on of the device and still meet the timing requirements. Additionally, TSOP6 packaging - with 0,72 Ω max on-resistance - enables the device to handle about five times the continuous current of the industry standard 2N7002. This in turn, allows the device to be used in a wider range of communications applications.





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