Power Electronics / Power Management


SuperFREDMesh technology enhances MOSFET portfolio

3 November 2004 Power Electronics / Power Management

STMicroelectronics recently introduced an n-channel MOSFET for use in HID lamps, high-end ballasts and switch-mode power supplies that use zero-voltage and zero-current transitions.

According to the company, the STx9NK60ZD is the first device built using a new high-voltage process technology known as SuperFREDMesh. This advanced technology realises a new carrier lifetime control process on ST's basic High Voltage SuperMESH series. The device shows, along with optimal dynamic performance, optimised body diode reverse-recovery time (trr) and very soft recovery. All these features help reduce switching losses. Devices built using the SuperFREDMesh technology also benefit from reduced on-resistance, Zener gate protection, high dv/dt capability and cost competitiveness.

ST says the part handles 600 V, a drain current of up to 7 A and offers a typical RDS(on) of 0,85 Ω. The STF9NK60ZD can handle up to 30 W, while the STB9NK60ZD and STP9NK60ZD each can handle up to 125 W.

For more information contact Simon Churches, Arrow Altech Distribution, +27 (0)11 923 9600, [email protected]



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