Rad-hard MOSFETs improve efficiency

26 January 2005 Power Electronics / Power Management

Two new radiation-hardened logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors, the IRHLUB7970Z4 and IRHLUB770Z4 have been released by International Rectifier. Compared to 2N2222A and 2N2907A bipolar transistors, IR claims these RAD-Hard MOSFETs require less energy, switch faster and feature a lower on-state resistance. They are packaged in a UB (3LCC) surface-mount or through-hole compact package. They improve gain and are ideal replacements for bipolar transistors in circuits requiring high tolerance to radiation, says the manufacturer. The devices can be driven directly from industry-standard logic gates, linear ICs, or microcontrollers that operate from a low voltage source of 3,3 to 5 V.

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