Universal active ORing controller IC designed for zero-failure power systems

18 May 2005 Power Electronics / Power Management

International Rectifier introduced a universal high-speed controller/N-channel power MOSFET driver which it says provides a high performance and cost effective 'Active ORing' function to preserve power redundancy in case of a short-circuit failure of one of the input power sources.

The IR5001S active ORing IC, housed in an SO-8 package, is used with an external MOSFET, replacing traditional diode ORing to increase efficiency and reduce power dissipation.

Active ORing is a key requirement for many high-end systems requiring maximum up-time, such as carrier-class communication equipment and telecom and datacom system servers.

"Compared with typical Schottky diode ORing circuits, a system using the IR5001S active ORing IC and an optimised external MOSFET for the given power level, will reduce on-board power dissipation by up to 85%, and can be made at least 50% smaller than diode solutions," said Carl Smith, marketing manager for networking and telecommunication products at IR.

"ORing circuits made with Schottky diodes run hotter for the same power level, and in many cases, this means that through-hole devices with heatsinks are needed, increasing bulk and manufacturing complexity. As a bonus, the IR5001S provides additional diagnostic features that increase system up-time, maximising quality of service."

Active ORing combines two or more power sources to create a redundant power source, preserving the input power supply in case one of the input sources fails. In the event of an input power failure, the active ORing circuit disconnects the non-functioning power source as quickly as possible to prevent the system bus voltage from falling, and to prevent large peak reverse currents.

The IR5001S controller IC has the option to be powered either directly from 36-75 V universal telecom bus voltage (100 V max), or from an external bias supply and bias resistor. It has 130 ns typical turn-off delay time, 20 ns typical FET turn-off time, and 3 A peak turn-off gate drive current.

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