High-voltage HEXFET enables 250 kHz off-line power supplies
22 November 2000
Power Electronics / Power Management
International Rectifier has introduced the Benchmark Series high-voltage HEXFET power MOSFETs for zero voltage switching (ZVS) AC/DC power supplies. The ZVS-specific MOSFETs have fast, yet soft reverse recovery time (trr) characteristics to help reduce EMI emissions in ZVS circuits, says IR.
Zero voltage switching topologies are increasingly popular in server, telecom and mainframe computer applications as designers strive to increase power density. ZVS topologies enable faster switching frequencies, reducing the size of magnetic components. Therefore, efficient ZVS components substantially contribute to lower power supply system cost and increased reliability. The new ZVS-specific MOSFETs have typical reverse recovery charge (Qrr) that is 50% less than existing industry-standard MOSFETs and helps reduce one of the main sources of noise in switching power supplies.
Extremely low Rds(on) limits conduction losses with body-diode recovery times as short as 150 ns or less that can enable switching speeds up to 250 kHz. Competing devices have slower reverse recovery body-diodes that can induce dv/dt stress failure as frequency increases, claims the manufacturer. The ZVS-specific devices offer the designer specialised components to help balance best overall system design and smaller size with higher fundamental switching frequency and regulatory compliance.
Table 1. Benchmark HEXFET/MOSFETs for ZVS applications
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