RFMD has introduced a family of high electron mobility transistor (HEMT) high-power transistors that represents the achievement of a baseline 0,5 μm GaN (Gallium Nitride) high-power transistor process. It is currently sampling to top-tier cellular infrastructure and WiMAX base station customers. These high power devices show excellent peak drain efficiency up to 67% at UMTS and up to 60% at WiMAX frequency bands. According to RFMD, it has achieved high gain of 16 dB, high power density of up to 4 W/mm at 28 V and 1000-hour high temperature reliability results. The GaN HEMT transistors include: the RF3820 (8 W), RF3912 (60 W), RF3913 (90 W) and RF3914 (120 W) for the wireless cellular market; and the 2,5 GHz RF3916 (50 W), RF3917 (75 W), RF3918 (100 W) and 3,5 GHz RF3821 (8 W), RF3919 (50 W) for the emerging WiMAX base station segment.
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