Power MOSFETs now in thermally-enhanced 4 mm² package

Power Electronics / Power Management

18 October 2006 Power Electronics / Power Management

Recognising the industry’s need for smaller, thinner, faster, cooler running and more reliable mosfet devices for portable applications, ON Semiconductor has introduced μCool (micro-cool) – a new family of high performance power mosfets that deliver design flexibility for portable applications.

The company has released its first six μCool devices in a thermally-enhanced, notably small, WDFN6 package.

"We have designed the μCool portfolio to exclusively address the unique power management challenges in portable devices such as lithium-ion battery charging circuits, high and low side load switches, and synchronous buck and boost circuits," said Thibault Kassir, ON Semiconductor's director of marketing for Power MOSFETS. "These first μCool devices are just the beginning of what we expect will be an extensive portfolio utilising our latest trench technology. Operating voltages will range from 8 V to 30 V and a variety of configurations will be offered - including single, dual, FETKY complementary and integrated load switch."

The six debut μCool products use exposed drain DFN technology for superior thermal resistance (38°C/W) and power ratings (1,9 W) in an impressively small 4 mm square footprint. Delivering up to a 190% improvement in steady state power rating over the industry standard SC-88 package and 130% improvement over the SC-70-6 flat lead package, according to the company, the WDFN6-packaged μCool devices - from a power perspective - make significantly better use of valuable board space in portable applications.

While the new μCool family has the same footprint dimensions as a standard SC-88 and SC-70-6 packages, ON's latest MOSFETs offer the added feature of an exposed flag on the bottom surface that acts as a drain contact and heat dissipation path. The improved thermal path allows for either greater power handling, or operation at a lower junction temperature. Operation at a lower temperature equates to lower RDS(on) or less power loss, extending battery life.

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Power MOSFETs now in thermally-enhanced 4 mm² package

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