At Power Systems World 2006, Infineon Technologies took the wraps off its family of next-generation power semiconductors used for DC-DC converter applications. According to the company, the new OptiMOS 3 30 V N-channel MOSFET family improves reliability and energy efficiency of 1 to 1,3% in typical power supply applications, by featuring industry-leading performance in key power conversion measures such as; on-state resistance, power density and gate charge. This seemingly small improvement can result in significant annual power savings, says Infineon. For example, a 1% improvement in 1200 W server power systems worldwide, would result in about 360 megawatts savings per year. The N-channel OptiMOS 3 process technology yields devices with the industry's lowest available on-resistance (RDS(on)), and an extremely low gate charge. For example, an OptiMOS 3 power MOSFET in a SuperSO8 package has a maximum rated RDS(on) of only 1,6 mΩ. Also, the low-gate charge allows the devices an easier drive, so less-expensive drivers can be used. In addition, the improved figure of merit (FOM) decreases the load for the driver by 30% which decreases the operating temperature of the driver. The OptiMOS 3 MOSFET family will be available in eight package types. See www.infineon.com/powermosfets.
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