STMicroelectronics has developed a new power MOSFET family. The first member allows customers to drastically reduce conduction losses and increase efficiency and reliability of their lighting applications by achieving very low ON-resistance and superior dynamic and avalanche characteristics, it claims.
The new STD11NM60N, benefiting from the second generation of ST's proprietary MDmesh technology, provides optimisation with a maximum RDS(ON) of 450 mΩ. The device's resistance value is reduced by up to 55% compared to the previous MDmesh technology, without sacrificing tight control of its temperature dependence.
In addition to substantially reducing ON-state losses by minimising the resistance value, ST says that the 600 V device features an energy-optimised driver circuit that enables the MOSFET to drive higher currents at a lower VGS(th) (voltage gate threshold). In fact, keeping the same threshold spread (2 V), the range of VGS used to drive the device has been lowered. This optimises the drive and ensures high noise immunity that prevents the circuit from switching on unintentionally.
The STD11NM60N features an excellent diode dv/dt capability as well as good avalanche performance allowing customers to keep operating temperatures within the typical working range. Heatsink dimensions can also be cut as a result of the very low conduction losses and reduced power dissipation.
The small size of the chip, housed in very tiny DPAK/IPAK and TO-220FP packages, make it particularly suited to lighting applications such as high power factor electronic ballasts and high intensity discharge (HID) lamp electronic ballasts.
For more information contact Larry Gordon, Arrow Altech Distribution, +27 (0)11 923 9600, [email protected]
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