55-100 V power MOSFETs have very low RDS(on) - 7 March 2007

Power Electronics / Power Management

55-100 V power MOSFETs have very low RDS_(on)

7 March 2007 Power Electronics / Power Management

Ixys has developed a new platform of Power MOSFETs called TrenchMV, which cover the 55 V to 100 V range with currents ranging from 44 A to 280 A. These devices use Ixys' unique Trench MOSFET technology to provide extremely low power dissipation with ultra-low RDS_(on) and an optimised intrinsic reverse diode.

These power MOSFETs are part of Ixys' growing product line aimed at low voltage power conversion applications. TrenchMV Power MOSFETS find use in many applications. They are designed to withstand even the most robust operating conditions required by the automotive market, as well as the industrial sector.

Other applications include DC-DC converters, battery chargers, motor drives and others. Additional Trench products and package options are in process, including options for lower and higher voltages.

Ixys offers a full range of standard packages and a full range of surface mount and discrete packages. In addition, versions are offered in Ixys' proprietary ISOPLUS packages, providing UL-recognised 2500 V isolation with superior thermal performance. Electrically isolated tabbed packages include the ISOPLUS220, ISOPLUS i4-Pak and ISOPLUS i5-Pak.

For more information contact PHD Powerhouse, +27 (0)11 444 4149, [email protected]

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Power Electronics / Power Management

55-100 V power MOSFETs have very low RDS_(on)

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