Linear power MOSFETs designed tougher

30 May 2007 Power Electronics / Power Management

IXYS has released a family of 500 V to 1200 V linear power MOSFETs, incorporating a proprietary cell-design that significantly improves ruggedness and power dissipation capabilities. These MOSFETs provide high performance in applications requiring precision and consistency during linear operation.

Unlike normal MOSFET operation where the transistor functions like an on/off switch, linear applications subject the MOSFET to high thermal stress due to the simultaneous occurrence of high drain voltage and current. This is why Trench and other planar MOSFET technologies are not recommended for linear operation. However, the new Linear MOSFETs are designed to meet these robust conditions mainly required by the consumer and industrial markets.

Common applications include linear power supplies, class A amplifiers, electronic loads, programmable resistors and motor control.

Optimisations were made to the fundamental planar cell design. The forward bias safe operating area (FBSOA) characteristic is one such targeted parameter that was optimised, which essentially allowed for a larger operating 'window' as dictated by the power limitations of the device. This extended power window translates to improved ruggedness and power dissipation capabilities during the high thermal stress conditions posed by the linear operating environment.

IXYS provides a wide selection: voltages include 500 V, 1000 V and 1200 V, while currents range from 17 A to 62 A. These Power MOSFETs are offered in a number of different packages including the standard TO-247 and a variety of 'plus' sizes.

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