ON Semiconductor has expanded its low Vce(sat) bipolar junction transistors (BJTs) portfolio to include PNP and NPN devices that incorporate advanced silicon technology. These new transistors deliver maximised power efficiency and longer battery life than traditional BJTs or planar MOSFETS. Ideal for a variety of portable applications, the new BJTs are available in multiple package options, including WDFN, SOT-23, SOT-223, SOT-563, ChipFET and SC-88.
The company's new NSSxxx low Vce(sat) surface mount devices are specifically designed for use in low voltage switching applications where energy efficient control is vital. They feature ultra-low saturation voltage of 45 mV at 1 A and high current gain of 300. Offering a high electrostatic discharge (ESD) tolerance of greater than 8000 V, they are self-protecting against unexpected surges and damage. By providing superior electrical performance and low temperature coefficient, they improve power efficiency and ultimately, battery power conservation without the need for additional ESD protection circuits. The medium switching speeds provide lower noise harmonics than MOSFETS and are therefore more suited to applications where Electro Magnetic Interference has to be controlled.
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