IC combines ESD
5 March 2008
Circuit & System Protection
STMicroelectronics has developed new devices that combine EMI filtering and ESD protection in a single ultra-compact package, enabling system designers to implement both functions within a footprint of 0,6 mm².
Two new devices have been announced, meeting IEC61000-4-2 level 4 for ESD protection and also having low line-to-ground capacitance of 30 pF to preserve high-speed signal integrity. Filter characteristics include high attenuation in the GSM band, enabling enhanced performance when protecting the keypad, side keys, external connectors or data lines in smart phones, PDAs, portable computers, PC peripherals and M2M communication modules.
The smallest component introduced is the EMIF01-1003M3 for single-line applications. Its 0,6 mm-high SOT883 package matches the 1,0 x 0,6 mm footprint of competing devices, which provide ESD protection only. The EMIF02-1003M6 is a two-channel device in a 1,0 x 1,45 mm Micro QFN 6-lead package, and its low mounted height of 0,55 mm further enhances low-profile design in advanced consumer products.
In addition to saving board space and simplifying layout, integrating protection and filtering functions into these two new devices also reduces assembly time and component-mounting costs while improving product reliability.
Both devices achieve 15 kV air discharge and 8 kV contact discharge, in accordance with the IEC61000-4-2 specification. Clamping performance is also robust thanks to the internal Pi-protection structure, with 9 V clamping voltage for the EMIF01 and 17 V for the EMIF02, when subjected to a 15 kV ESD strike. This performance is necessary to protect leading-edge products built from sensitive CMOS circuits using deep sub-micron process geometries. Low series resistance of 100 Ω and leakage current of 100 nA also minimise energy losses during normal circuit operation.
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