600 V trench IGBTs

30 April 2008 Power Electronics / Power Management

International Rectifier has introduced a family of 600 V insulated gate bipolar transistors (IGBTs) that is said to reduce power dissipation by up to 30% in uninterruptible power supply and solar inverter applications up to 3 kW.

The new application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses, and are optimised for switching at 20 kHz with low short circuit requirements, enabling high efficiency power conversion.

Co-packaged with ultrafast soft recovery diodes, the new family of IGBTs has lower collector-to-emitter saturation voltage and total switching energy than punch-through and non-punch-through type IGBTs. In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.

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