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Low-loss power MOSFET
28 May 2008, Power Electronics / Power Management

STMicroelectronics has announced a new power MOSFET - the STV300NH02L - featuring low, microΩ ON-resistance to reduce losses and increase efficiency in demanding power supply systems. This new high-current n-channel device is intended particularly for the paralleling configuration power supplies that are widely used to increase system reliability in server applications.

ST has developed an innovative ribbon-bonding technology that delivers a low typical Rds(on) of 800 μΩ. The 20 V device, which is also ideal for reducing secondary rectification losses in high-efficiency DC-DC converters, provides excellent protection under short-circuit conditions, with a very low turn-off time.


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Further reading:

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