Power Electronics / Power Management


Half-bridge 600 V and 1200 V IGBT modules

28 May 2008 Power Electronics / Power Management

Vishay launched a new series of half-bridge insulated-gate bipolar transistors (IGBT) in the industry-standard Int-A-Pak package. The series consists of eight 600 V and 1200 V devices that offer a variety of technologies for high hard-switching operating frequencies in standard and ultrafast speeds.

The eight new devices feature three different IGBT technologies to meet a variety of application needs. The GA100TS60SFPbF and GA200HS60S1PbF offer standard punch-through (PT) IGBT technology, while the GA200TS60UPbF, GA75TS120UPbF and GA100TS120UPbF utilise Generation 4 technology for tighter parameter distribution and high efficiency. The GB100TS60NPbF, GB150TS60NPbF and GB200TS60NPbF modules offer Generation 5 non-punch-through (NPT) technology for the added benefit of 10 μs short circuit capabilities.

The GA100TS60SFPbF and GA200HS60S1PbF are standard-speed devices optimised for hard switching operating frequencies up to 1 kHz. The other six IGBTs are ultrafast modules co-packaged with HEXFRED ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The ultrafast devices are designed for high operating frequencies from 8 kHz to 60 kHz in hard switching, and higher than 200 kHz in resonant mode.

Featuring high current ratings from 75 A to 200 A with low power losses, the IGBTs are optimised for isolated and non-isolated converters, switches, inverters and choppers in high-frequency industrial welding, UPS, SMPS, solar inverter and motor drive applications.

The new IGBTs are lead-free and provide simple, direct mounting to the heatsink. The devices offer low EMI for less snubbing, and provide very low junction to case thermal resistance.



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