International Rectifier has introduced a 25 V synchronous buck converter DirectFET MOSFET chipset for point-of-load (POL) converter designs.
The new chipset combines IR’s latest generation HEXFET silicon and DirectFET packaging technology to deliver a high density, single control and single synchronous MOSFET solution in the footprint of an SO-8, and with slim 0,7 mm profile. The new IRF6710S2, IRF6795M and IRF6797M devices are characterised by very low on-resistance, gate charge and gate-to-drain charge to achieve increased efficiency and thermal performance, and enable operation in excess of 25 A per phase. The IRF6710S2 is ideally suited as a control MOSFET due to its low gate resistance of 0,3 Ω and low Miller charge of 3,0 nC. The IRF6795M and IRF6797M feature low RDS(on) to reduce conduction losses while the integrated Schottky reduces diode conduction losses and reverse recovery losses, making these devices well suited for high current synchronous MOSFET circuits.
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