Power Electronics / Power Management


High-voltage MOSFETs

15 October 2008 Power Electronics / Power Management

The CoolMOS 900 V Super-Junction MOSFET series from Infineon offers extremely low static and dynamic losses, with device characteristics resulting in excellent performance for switching applications. The portfolio contains most standard packages and RDS(on) values starting with 120 m in TO-247, 340 m in TO-220 and TO-220 FullPAK up to 1200 m in all packages. With its low RDS(on) and high blocking voltage, CoolMOS technology provides benefits for industrial and renewable energy systems such as solar inverters, ATX power supplies, 3-phase active front-ends, lighting ballasts, auxiliary power supplies and quasi-resonant flyback converters. These MOSFETS can replace IGBTs in industrial applications and enable high power levels without paralleling.

EBV Electrolink, +27 (0)21 402 1940, [email protected], www.ebv.com

Electrocomp, +27 (0)11 458 9000, [email protected], www.electrocomp.co.za



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