Power Electronics / Power Management


Integrated MOSFET and Schottky diode

21 January 2009 Power Electronics / Power Management

Vishay has developed a 30 V monolithic power MOSFET and Schottky diode offered in a package with top and bottom heat dissipation paths for high performance in systems with forced air cooling. Optimised for the low-side control switch in synchronous rectification for high-current DC-DC converters, VRM applications, graphics cards, and point-of-load in servers and telecom systems, the SiE726DF offers low on-resistance of 0,0024 maximum at a 10 V gate drive (0,0033 maximum at 4,5 V. The device provides a typical gate charge of 50 nC, with a Qrr of 30 nC and VSD of 0,37 V. The double-sided cooling provided by the PolarPAK package allows for operation with a lower junction temperature with a thermal resistance of 1°C/W top and


1°C/W bottom.

EBV Electrolink, +27 (0)21 402 1940, [email protected], www.ebv.com



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