Opto-Electronics


870 nm infrared emitter

18 February 2009 Opto-Electronics

Vishay has broadened its optoelectronics portfolio with the introduction of an 870 nm SMD infrared emitter with low forward voltage in the PLCC2 package.

The new VSMF4720 combines a viewing angle of ±60° with a radiant intensity of 16 mW/sr at 100 mA. The combination of a wide viewing angle, high power, and high speed makes it ideal for data transmission applications such as infrared toll collection and wireless audio transmission. Suitable for high-pulse-current operation, the device offers high power output up to 1 A and 50 mW optical power at 100 mA.

Given the VSMF4720’s low and stable forward voltage of 1,45 V at 100 mA and 2,1 V at 1 A, it provides the basis for very uniform operation performance, particularly in a series circuit layout. Featuring GaAlAs double hetero technology, the emitter offers switching times of 15 ns, meeting the requirements for high-modulation operation at 24 MHz and supporting data transmission rates of up to 16 Mbps.

For more information contact EBV Electrolink, +27 (0)21 402 1940, [email protected], www.ebv.com



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