N-channel power MOSFETs
8 July 2009
Power Electronics / Power Management
New from International Rectifier is a series of 25 V and 30 V n-channel trench HEXFET power MOSFETs featuring enhanced switching performance for synchronous buck converter and battery protection.
The new family of MOSFETs utilises IR’s proven silicon technology to deliver very low on-state resistance and improved switching performance. The devices’ low conduction losses improve full-load efficiency and thermal performance, while low switching losses help to achieve high efficiency even at light loads.
Single and dual n-channel MOSFETs are available. Single devices are offered in a PQFN 5 x 6 mm and 3 x 3 mm package optimised for high volume production in addition to D-PAK, I-PAK and SO-8 packages, while dual devices are offered in an SO-8 package. The new devices are RoHS compliant and can be offered free of halogen.
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