Power Electronics / Power Management


12 V power MOSFET

19 August 2009 Power Electronics / Power Management

Vishay has expanded its family of Gen III TrenchFET power MOSFETs down to 12 V with the release of a new N-channel device offering very low on-resistance and on-resistance times gate charge. The SiR494DP features a maximum on-resistance of 1,2W at 10 V gate drive and 1,7 mW at 4,5 V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in DC-DC converter applications, is 85 nC at 4,5 V.

The SiR494DP is targeted for use as the low-side MOSFET in synchronous buck converters with low input voltages of 3,3 to 5 V, in OR-ing applications with low output voltages (5 V, 3,3 V and below), and in a wide range of systems using point-of-load (POL) power conversion with input voltages of 5 V and 3,3 V, where its low conduction and switching losses enable efficient use of power.

The power MOSFET is offered in the PowerPAK SO-8 package, which is lead-free, halogen-free according to IEC 61249-2-21 and compliant with RoHS directive 2002/96/EC.

For more information contact EBV Electrolink, +27 (0)21 402 1940, capetown@ebv.com, www.ebv.com



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