Power MOSFETs with extended FBSOA
2 September 2009
Power Electronics / Power Management
Ixys has released its new Linear L2 power MOSFET family in the 250, 500, and 600 V ratings. These new devices are designed to sustain high power in linear mode operation and feature low static drain-to-source on-resistances. They provide high performance and reliability in controlled current output applications which require robust and reliable devices for use in linear-mode operation. Applications include circuit breakers, current sources, programmable loads, power controllers, power regulators, motor control, power amplifiers and soft start applications.
The MOSFETs are optimised to endure the high thermo-electrical stress caused by the simultaneous occurrence of high drain voltage and current commonly present in applications operating in linear mode. In response to these occurrences, IXYS has made optimisations to the internal structure of this new family of linear MOSFETs in order to maximise power dissipation capabilities. The forward bias safe operating area (FBSOA) is one such key characteristic that was optimised to overcome limitations and constraints posed by conventional power MOSFETs in linear applications. Additional features include avalanche capabilities and a guaranteed FBSOA at 75°C. These extended FBSOA power MOSFETs are not intended for high-speed switching applications.
Linear L2 MOSFETs are presented with drain current ratings from 15 A to 90 A and are available in a variety of discrete industry standard package housings.
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