International Rectifier has introduced the IRF6718 DirectFET MOSFET. The new 25 V device offers low on-state resistance and is optimised for DC switch applications such as active ORing, hot swap and electronic fuse (E-fuse).
Featuring IR’s latest generation silicon technology, the IRF6718 is the company’s first device hosted in a large can DirectFET package. Delivering RDS(on) of only 0,5 mΩ at 10 V VGS in a 60% smaller footprint and 85% lower profile than a D2PAK, the new device reduces conduction losses associated with the pass element to improve the efficiency of the entire system. The device also provides an improved safe operating area (SOA) capability for E-fuse and hot swap circuits. It is offered lead-free and is RoHS compliant.
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