Vishay has released three new 500 V MOSFETs that extend its Gen 6.2 N-channel planar FET technology to the TO-220, TO-220F and TO-247 packages.
The new SiHP18N50C (TO-220), SiHF18N50C (TO-220 FULLPAK) and SiHG20N50C combine their 500 V rating with low 0,270 maximum on-resistance at a 10 V gate drive. This low RDS(ON) translates into low conduction losses in power factor correction (PFC) and pulse width modulation (PWM) applications in a wide range of electronic systems.
In addition to their low on-resistance, the devices feature a low gate charge of 65 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is 17,75. For reliable operation, the devices are 100% avalanche tested and feature high single-pulse (EAS) and repetitive (EAR) avalanche energy capabilities. Peak current handling is 72 A pulsed and 18 A continuous.
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